We have investigated shot noise and conduction of graphene field effect nanoribbon devices at low temperature. By analyzing the exponential $I-V$ characteristics of our devices in the transport gap region, we found out that transport follows variable range hopping laws at intermediate bias voltages $1 < V_{ bias} < 12$ mV. In parallel, we observe a strong shot noise suppression leading to very low Fano factors. The strong suppression of shot noise is consistent with inelastic hopping, in crossover from one- to two-dimensional regime, indicating that the localization length $l_{ loc} < W$ in our nanoribbons.
Categories: cond-mat.mes-hall