Electronic properties of the single crystal of GdV6Sn6, where non-magnetic V-kagome layers are separated by magnetic Gd-triangular lattice, are investigated. GdV6Sn6 exhibits unique magnetotransport properties at low-temperature such as non-linear Hall resistivity and increase of resistance R in magnetic field H as R ~ H^0.75 up to 56 T with Shubnikov-De Haas oscillations. Investigation of the non-magnetic analogue YV6Sn6 and the first principles calculations reveal these properties are relevant to the bands arising from the V-kagome layer. A magnetic transition at 5 K in GdV6Sn6 modifies the transport properties, pointing to a coupling between Gd-spins on the triangular lattice and carriers in the V-kagome layer.
Categories: cond-mat.str-el cond-mat.mtrl-sci