We report on the demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown $\beta$-Ga$_2$O$_3$ metal-semiconductor field effect transistor (MESFET). The low-temperature (600$^{ \circ}$C) heavy (n$^{ +}$) Si-doped regrown layers exhibit extremely high conductivity with sheet resistance of 73 $\Omega$/$\square$ and record low metal/n$^{ +}$-Ga$_2$O$_3$ contact resistance of 80 m$\Omega$.mm and specific contact resistivity of 8.3$\times$10$^{ -7}$ $\Omega$.cm$^{ 2}$ were achieved. The fabricated MESFETs exhibit a maximum drain-to-source current of 130 mA/mm, a high I$_{ ON}$/I$_{ OFF}$ of $>$10$^{ 10}$ with a high power FOM of 25 MW/cm$^{ 2}$ were achieved without any field plates. Nanoparticle-assisted Raman thermometry, thermal modeling, and infrared thermography were performed to assess the device self-heating under the high current and power conditions. This demonstration shows the promise of MOVPE technique for the realization of high-performance lateral $\beta$-Ga$_2$O$_3$ devices and also highlights the need for device-level thermal management.
Categories: physics.app-ph