In this letter, fin-shape tri-gate $\beta$-Ga$_{ 2}$O$_{ 3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{ 2}$ - a record high for any $\beta$-Ga$_{ 2}$O$_{ 3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $\beta$-Ga$_{ 2}$O$_{ 3}$ channels allowing for low ON resistances R$_{ ON}$ in $\beta$-Ga$_{ 2}$O$_{ 3}$ MESFETs. Fin-widths (W$_{ fin}$) were 1.2-1.5 $\mu$m and there were 25 fins (N$_{ fin}$) per device with a trench depth of $\sim$1$\mu$m. A $\beta$-Ga$_2$O$_3$ MESFET with a source-drain length of 6.4 $\mu$m exhibits a high ON current (187 mA/mm), low R$_{ ON}$ (20.5 $\Omega$.mm) and a high average breakdown field (4.2 MV/cm). All devices show very low reverse leakage until catastrophic breakdown for breakdown voltages scaled from 1.1kV to $\sim$3kV. This work demonstrates the potential of channel engineering in improving $\beta$-Ga$_{ 2}$O$_{ 3}$ device performance toward lower conduction losses for low-to-medium voltage applications.
Categories: physics.app-ph cond-mat.mtrl-sci