We present a study of p-type doping of CdTe and Cd$_{ 1-x}$Mn$_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2 \times 10^{ 11}$ cm$^{ -2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd$_{ 1-x}$Mn$_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.
Categories: cond-mat.mtrl-sci