We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{ LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{ LaAlO_3}$/$\mathrm{ SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{ SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{ mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{ \mu A/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.
Categories: cond-mat.mes-hall