We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{ 2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{ 2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
Categories: cond-mat.mes-hall